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-Paper title,Organization name,Label,ID
-3Gb/s AC-coupled chip-to-chip communication using a low-swing pulse receiver,"North Carolina State Univ.,Raleigh,NC,USA",university,0
-Sub-Micron CMOS / MOS-Bipolar Hybrid TFTs for System Displays,"Advanced LCD Technology Development Center Company Limited, Yokohama, Kanagawa, Japan",company,1
-24.4 A 680nA fully integrated implantable ECG-acquisition IC with analog feature extraction,"imec,Heverlee,Belgium",research institute,2
-A write-back cache memory using bit-line steal technique,"Corp. Semicond. Dev. Div.,Matsushita Electr. Ind. Co. Ltd.,Kyoto,Japan",company,3
-High performance 0.25 /spl mu/m gate-length doped-channel AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates,"APA Optics, Inc., Blaine, MN, USA",company,4
-3-terminal nanoelectromechanical switching device in insulating liquid media for low voltage operation and reliability improvement,"National NanoFab Center, Daejeon, South Korea",research institute,5
-Full metal gate with borderless contact for 14 nm and beyond,"Toshiba at Albany NanoTech,NY,USA",company,6
-A novel self-aligned shallow trench isolation cell for 90 nm 4 Gbit NAND flash EEPROMs,"SoC R&D Center,Semiconductor Company,Toshiba Corp.,Isogo-ku,Yokohama,Japan",company,7
-A 0.13/spl mu/m CMOS EDGE/UMTS/WLAN Tri-Mode /spl Delta//spl Sigma/ ADC with -92dB THD,"ETH,Zurich,Switzerland; Advanced Circuit Pursuit,Zollikon,Switzerland",university,8
-On the gate oxide scaling of high performance CMOS transistors,"Semiconductor R&D Center, Samsung Electronics Co., Ltd, Yongin-City, Gyeonggi-Do, Korea (ROK)",company,9
-A 0.13/spl mu/m CMOS EDGE/UMTS/WLAN Tri-Mode /spl Delta//spl Sigma/ ADC with -92dB THD,"Advanced Circuit Pursuit,Zollikon,Switzerland; ETH,Zurich,Switzerland",company,10
-A 3Gb/s 8b single-ended transceiver for 4-drop DRAM interface with digital calibration of equalization skew and offset coefficients,"Pohang Univ. of Sci. & Technol.,South Korea",university,11
-25.5 A Self-Calibrated 1.2-to-3.8GHz 0.0052mm2 Synthesized Fractional-N MDLL Using a 2b Time-Period Comparator in 22nm FinFET CMOS,"Intel,Hillsboro,OR",company,12
-Accurate performance evaluation for the horizontal nanosheet standard-cell design space beyond 7nm technology,"GLOBALFOUNDRIES Inc., Albany, NY, USA",company,13
-"Front-end-of-line (FEOL) optimization for high-performance, high-reliable strained-Si MOSFETs; from virtual substrate to gate oxidation","Memory Division, Samsung Electronics Co, Yongin-City, Gyeonggi-Do, Korea",company,14
-A 14 b 100 Msample/s CMOS DAC designed for spectral performance,"Illinois Univ.,Urbana,IL,USA",university,15
-Design of the Power6 Microprocessor,"IBM Systems Group,Austin,TX",company,16
-Collective-effect state variables for post-CMOS logic applications,"Strategic Technology Group,Advanced Micro Devices,Sunnyvale,CA,USA",company,17
-Single-chip IF transceiver IC with wide dynamic range variable gain amplifiers for wideband CDMA applications,"Syst. LSI Dev. Center,Mitsubishi Electr. Corp.,Hyogo,Japan",company,18
-Formation of Si-on-Insulator Structure by Lateral Solid Phase Epitaxial Growth with Local P-Doping,"Central Research Laboratory,Hitachi Ltd. Kokubunji. Tokyo,Japan",company,19
-1D thickness scaling study of phase change material (Ge2Sb2Te5) using a pseudo 3-terminal device,"Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea",company,20
-A 500MHz multi-banked compilable DRAM macro with direct write and programmable pipelining,"IBM Microelectron.,Burlington,VT,USA",company,21
-Dislocation engineering for a silicon-based light emitter at 1.5 /spl mu/,"MPI für Mikrostrukturphysik, Halle, Germany",research institute,22
-An enhanced 130 nm generation logic technology featuring 60 nm transistors optimized for high performance and low power at 0.7 - 1.4 V,"QRE, Hillsboro, OR, USA",company,23
-Physical understanding of Vth and Idsat variations in (110) CMOSFETs,"Center for Semiconductor Research & Development,Toshiba Corporation,Japan",company,24
-Destructive-read random access memory system buffered with destructive-read memory cache for SoC applications,"IBM Microelectron.,Hopewell Junction,NY,USA",company,25
-Benchmarking of monolithic 3D integrated MX2 FETs with Si FinFETs,"KUL, Leuven, Belgium",university,26
-A 48-mW 18-Gb/s fully integrated CMOS optical receiver with photodetector and adaptive equalizer,"Applied Science and Technology Research Institute,Hong Kong",research institute,27
-Role of non-radiative recombination in the degradation of InGaN-based laser diodes,"Matsushita Electric Industrial Limited, Takatsuki, Osaka, Japan",company,28
-Highly area efficient and cost effective double stacked S/sup 3/ (stacked single-crystal Si) peripheral CMOS SSTFT and SRAM cell technology for 512M bit density SRAM,"R & D Center, Samsung Electronics Kiheung-Eup, Yongin-City, Kyungki-do, Korea",company,29
-"Strained SOI technology for high-performance, low-power CMOS applications","MIRAI-ASET,Kawasaki,Japan",university,30
-Damascene integration of copper and ultra-low-k xerogel for high performance interconnects,"Texas Instruments Inc, Dallas, TX, US",company,31
-A crossing charge recycle refresh scheme with a separated driver sense-amplifier for Gb DRAMs,"ULSI Device Dev. Labs.,NEC Corp.,Kanagawa,Japan",company,32
-Large-signal performance of high-BV/sub CEO/ graded epi-base SiGe HBTs at wireless frequencies,"IBM Microelectronics, Burlington, VT, USA",company,33
-"A 65 nm CMOS technology with a high-performance and low-leakage transistor, a 0.55 /spl mu/m/sup 2/ 6T-SRAM cell and robust hybrid-ULK/Cu interconnects for mobile multimedia applications","Fujitsu Laboratories Ltd., Atsugi, Kanagawa, Japan",company,34
-Low-power embedded ReRAM technology for IoT applications,"Incubation Center,Renesas Electronics Corp.,Shimokuzawa,Chuou-ku,Sagamihara,Japan",company,35
-A DSL customer-premise equipment modem SoC with extended reach/rate for broadband bridging and routing,"Texas Instruments Bangalore and Texas Instruments,Dallas,TX",company,36
-"An Artificial Iris ASIC with High Voltage Liquid Crystal Driver, 10 nA Light Range Detector and 40 nA Blink Detector for LCD Flicker Removal","Imec,Leuven,Belgium",research institute,37
-First Demonstration of Low Temperature (≤500°C) CMOS Devices Featuring Functional RO and SRAM Bitcells toward 3D VLSI Integration,"imec from Samsung Electronics,Korea",company,38
-Competitive and cost effective high-k based 28nm CMOS technology for low power applications,"IBM Semiconductor Research and Development Center (SRDC), Samsung Electronics Company Limited, Hopewell Junction, NY, USA",company,39
-"Scalable 3D-FPGA using wafer-to-wafer TSV interconnect of 15 Tbps/W, 3.3 Tbps/mm2","Technology Research Department,Association of Super-Advanced Electronics Technologies (ASET),,Higashi-koigakubo,Kokubunji,Tokyo,,Japan",research institute,40
-"21.8 An all-in-one (Qi, PMA and A4WP) 2.5W fully integrated wireless battery charger IC for wearable applications","MAPS,Yongin,Korea",company,41
-High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length,"Samsung Advanced Logic Lab,Austin,TX",company,42
-Interconnect Scaling Scenario Using A Chip Level Interconnect Model,"Semiconductor Research Center,Matsushita Electric Industrial Co.,Ltd.,Yagumo-nakamachi,Moriguchi,Osaka,Japan",company,43
-A 12 b 50 M sample/s cascaded folding and interpolating ADC,"Philips Composants et Semiconducteurs,Caen,France",company,44
-Development of sub 10-µm ultra-thinning technology using device wafers for 3D manufacturing of terabit memory,"Fujitsu Laboratories Ltd.,Japan",company,45
-A 3.1 to 5 GHz CMOS DSSS UWB transceiver for WPANs,"Sony,Tokyo,Japan",company,46
-30.1 8b Thin-film microprocessor using a hybrid oxide-organic complementary technology with inkjet-printed P2ROM memory,"Panasonic,Osaka,Japan",company,47
-Characterizing Electromigration Effects in a 16nm FinFET Process Using a Circuit Based Test Vehicle,"Cisco Systems, Hong Kong, China",company,48
-"A 180MS/s, 162Mb/s wideband three-channel baseband and MAC processor for 802.11 a/b/g","Engim,Acton,MA,USA",company,49